9th International Symposium on Quality Electronic Design (isqed 2008) Characterization of New Static Independent-Gate-Biased FinFET Latches and Flip-Flops under Process Variations March 17-March 19 ISBN: 978-0-7695-3117-5
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.71
Brute-force sequential circuits with reduced clock load and simpler circuitry are widely used in the state-of-the-art integrated circuits. In this paper, new brute-force independent-gate FinFET sequential circuits are evaluated for power consumption, speed, and noise immunity characteristics at different process corners under parameter fluctuations in a 32nm FinFET technology. With the independent-gate FinFET latches and flip-flops, the total active mode power consumption, the clock power, and the average leakage power are reduced by up to 47%, 32%, and 37%, respectively, while maintaining similar speed and data stability as compared to the circuits with tied-gate FinFETs across different process corners. Furthermore, the area is reduced by 20% with the new sequential circuits due to the smaller transistors as compared to the circuits with tied-gate FinFETs.
Citation:
Sherif A. Tawfik, Volkan Kursun, "Characterization of New Static Independent-Gate-Biased FinFET Latches and Flip-Flops under Process Variations," isqed, pp.311-316, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||