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9th International Symposium on Quality Electronic Design (isqed 2008)
Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes
March 17-March 19
ISBN: 978-0-7695-3117-5
ASCII Text
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Feng Liu, Jin He, Yue Fu, Jinhua Hu, Wei Bian, Yan Song, Xing Zhang, Mansun Chan, "Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes," Quality Electronic Design, International Symposium on, pp. 271-276, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008.
 
 
BibTex
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@article{ 10.1109/ISQED.2008.34,
author = {Feng Liu and Jin He and Yue Fu and Jinhua Hu and Wei Bian and Yan Song and Xing Zhang and Mansun Chan},
title = {Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes},
journal ={Quality Electronic Design, International Symposium on},
volume = {0},
year = {2008},
isbn = {978-0-7695-3117-5},
pages = {271-276},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.34},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Quality Electronic Design, International Symposium on
TI - Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes
SN - 978-0-7695-3117-5
SP271
EP276
A1 - Feng Liu,
A1 - Jin He,
A1 - Yue Fu,
A1 - Jinhua Hu,
A1 - Wei Bian,
A1 - Yan Song,
A1 - Xing Zhang,
A1 - Mansun Chan,
PY - 2008
KW - double-gate MOSFET
KW - compact model
KW - drain current
VL - 0
JA - Quality Electronic Design, International Symposium on
ER -
 
A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFET valid for symmetric, asymmetric, SOI, and independent gate operation modes is presented in this paper. Based on the exact solution of the 1-D Poisson’s equation of a general DG-MOSFET configure, a generic drain current model is derived from Pao-Sah’s double integral in terms of the carrier concentration. The model is verified by extensive comparisons with 2-D numerical simulations under different bias conditions to all four terminals. The concise mathematic formulation allows the unification various double-gate models into a carrier-based core model for compact DG-MOSFET model development.
Index Terms:
double-gate MOSFET, compact model, drain current
Citation:
Feng Liu, Jin He, Yue Fu, Jinhua Hu, Wei Bian, Yan Song, Xing Zhang, Mansun Chan, "Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes," isqed, pp.271-276, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008
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