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9th International Symposium on Quality Electronic Design (isqed 2008)
Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)
March 17-March 19
ISBN: 978-0-7695-3117-5
ASCII Text
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Yiran Chen, Xiaobin Wang, Hai Li, Harry Liu, Dimitar V. Dimitrov, "Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)," Quality Electronic Design, International Symposium on, pp. 684-690, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008.
 
 
BibTex
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@article{ 10.1109/ISQED.2008.140,
author = {Yiran Chen and Xiaobin Wang and Hai Li and Harry Liu and Dimitar V. Dimitrov},
title = {Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)},
journal ={Quality Electronic Design, International Symposium on},
volume = {0},
year = {2008},
isbn = {978-0-7695-3117-5},
pages = {684-690},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.140},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Quality Electronic Design, International Symposium on
TI - Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)
SN - 978-0-7695-3117-5
SP684
EP690
A1 - Yiran Chen,
A1 - Xiaobin Wang,
A1 - Hai Li,
A1 - Harry Liu,
A1 - Dimitar V. Dimitrov,
PY - 2008
KW - null
VL - 0
JA - Quality Electronic Design, International Symposium on
ER -
 
We proposed a combined magnetic and circuit level technique to explore the design methodology of Spin-Torque Transfer RAM (SPRAM). A dynamic magnetic model of magnetic tunneling junction (MTJ), which is based upon measured spin torque induced magnetization switching behavior, is also proposed. The response of CMOS circuitry is characterized by SPICE and used as the input of our MTJ model to simulate the dynamic behavior of SPRAM cell. By using this technique, we explored the design margin of SPRAM cell with one-transistor-one-MTJ (1T1J) structure. Simulation results show that our technique can significantly reduce the design pessimism, compared to conventional SRPAM cell model.
Citation:
Yiran Chen, Xiaobin Wang, Hai Li, Harry Liu, Dimitar V. Dimitrov, "Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)," isqed, pp.684-690, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008
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