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9th International Symposium on Quality Electronic Design (isqed 2008)
The Statistical Failure Analysis for the Design of Robust SRAM in Nano-Scale Era
March 17-March 19
ISBN: 978-0-7695-3117-5
ASCII Text
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Young-Gu Kim, Soo-Hwan Kim, Hoon Lim, Sanghoon Lee, Keun-Ho Lee, Young-Kwan Park, Moon-Hyun Yoo, "The Statistical Failure Analysis for the Design of Robust SRAM in Nano-Scale Era," Quality Electronic Design, International Symposium on, pp. 369-372, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008.
 
 
BibTex
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@article{ 10.1109/ISQED.2008.108,
author = {Young-Gu Kim and Soo-Hwan Kim and Hoon Lim and Sanghoon Lee and Keun-Ho Lee and Young-Kwan Park and Moon-Hyun Yoo},
title = {The Statistical Failure Analysis for the Design of Robust SRAM in Nano-Scale Era},
journal ={Quality Electronic Design, International Symposium on},
volume = {0},
year = {2008},
isbn = {978-0-7695-3117-5},
pages = {369-372},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.108},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
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TY - CONF
JO - Quality Electronic Design, International Symposium on
TI - The Statistical Failure Analysis for the Design of Robust SRAM in Nano-Scale Era
SN - 978-0-7695-3117-5
SP369
EP372
A1 - Young-Gu Kim,
A1 - Soo-Hwan Kim,
A1 - Hoon Lim,
A1 - Sanghoon Lee,
A1 - Keun-Ho Lee,
A1 - Young-Kwan Park,
A1 - Moon-Hyun Yoo,
PY - 2008
KW - Statistical failure analysis
KW - SRAM
KW - DFM
VL - 0
JA - Quality Electronic Design, International Symposium on
ER -
 
Increase of the process variability with aggressive technology scaling causes many productivity issues in VLSI manufacturing. Analysis about the relationship between process variability and failure has been performed to specify guidelines in both technology and design aspects for yield optimization. By applying the proposed methodology, the core scheme and the operating voltage of the 200MHz SRAM were determined to secure the immunity to operational failures. In DFM point of view, the statistical circuit analysis for failure characteristics is indispensable to guarantee an optimal yield in manufacturing.
Index Terms:
Statistical failure analysis, SRAM, DFM
Citation:
Young-Gu Kim, Soo-Hwan Kim, Hoon Lim, Sanghoon Lee, Keun-Ho Lee, Young-Kwan Park, Moon-Hyun Yoo, "The Statistical Failure Analysis for the Design of Robust SRAM in Nano-Scale Era," isqed, pp.369-372, 9th International Symposium on Quality Electronic Design (isqed 2008), 2008
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