8th International Symposium on Quality Electronic Design (ISQED'07) Device Footprint Scaling for Ultra Thin Body Fully Depleted SOI San Jose, California March 26-March 28 ISBN: 0-7695-2795-7
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.60
We propose selective scaling of device footprint for 65 nm and beyond CMOS technologies. The benefits of selective scaling of device footprint are illustrated using an ultra-thin body (UTB) fully-depleted SOI (FD-SOI) transistor as an example. We study the effect of footprint scaling on device, circuit, and system level performance. A complete 2-D device structure is modeled for the numerical analysis. The results predict that an optimal footprint design can provide 30% smaller chip layout area, 20% faster speed and 10% less dynamic power on overall chip performance benchmarked with a 53-bit pipelined multiplier.
Citation:
Jie Deng, Keunwoo Kim, Ching-Te Chuang, H.-S Philip Wong, "Device Footprint Scaling for Ultra Thin Body Fully Depleted SOI," isqed, pp.145-152, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||