loading...
 This Article 
   
 Share 
   
 Bibliographic References 
   
 Add to: 
 
Digg
Furl
Spurl
Blink
Simpy
Google
Del.icio.us
Y!MyWeb
 
 Search 
   
8th International Symposium on Quality Electronic Design (ISQED'07)
Device Footprint Scaling for Ultra Thin Body Fully Depleted SOI
San Jose, California
March 26-March 28
ISBN: 0-7695-2795-7
Jie Deng, Stanford University, USA
Keunwoo Kim, IBM T.J. Watson Research Center, USA
Ching-Te Chuang, IBM T.J. Watson Research Center, USA
H.-S Philip Wong, Stanford University, USA
We propose selective scaling of device footprint for 65 nm and beyond CMOS technologies. The benefits of selective scaling of device footprint are illustrated using an ultra-thin body (UTB) fully-depleted SOI (FD-SOI) transistor as an example. We study the effect of footprint scaling on device, circuit, and system level performance. A complete 2-D device structure is modeled for the numerical analysis. The results predict that an optimal footprint design can provide 30% smaller chip layout area, 20% faster speed and 10% less dynamic power on overall chip performance benchmarked with a 53-bit pipelined multiplier.
Citation:
Jie Deng, Keunwoo Kim, Ching-Te Chuang, H.-S Philip Wong, "Device Footprint Scaling for Ultra Thin Body Fully Depleted SOI," isqed, pp.145-152, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007
Usage of this product signifies your acceptance of the Terms of Use.