8th International Symposium on Quality Electronic Design (ISQED'07) Combating NBTI Degradation via Gate Sizing San Jose, California March 26-March 28 ISBN: 0-7695-2795-7
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.48
NBTI is becoming one of the dominant circuit reliability concerns in nano-scale technologies. We believe that designers can combat NBTI degradation using appropriate circuit constraints. This paper presents a design technique to tolerate NBTI degradation by gate sizing. We provide an NBTI-aware gate sizing problem formulation and propose a solution method. The experimental results for MCNC?91 benchmark circuits show that for NBTI tolerance the purposed method results in less than 1% area increase in most cases while a formulation based on traditional performance focused methods may lead to over 4% area increase.
Citation:
Xiangning Yang, Kewal Saluja, "Combating NBTI Degradation via Gate Sizing," isqed, pp.47-52, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||