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8th International Symposium on Quality Electronic Design (ISQED'07)
Combating NBTI Degradation via Gate Sizing
San Jose, California
March 26-March 28
ISBN: 0-7695-2795-7
Xiangning Yang, University of Wisconsin-Madison, USA
Kewal Saluja, University of Wisconsin-Madison, USA
NBTI is becoming one of the dominant circuit reliability concerns in nano-scale technologies. We believe that designers can combat NBTI degradation using appropriate circuit constraints. This paper presents a design technique to tolerate NBTI degradation by gate sizing. We provide an NBTI-aware gate sizing problem formulation and propose a solution method. The experimental results for MCNC?91 benchmark circuits show that for NBTI tolerance the purposed method results in less than 1% area increase in most cases while a formulation based on traditional performance focused methods may lead to over 4% area increase.
Citation:
Xiangning Yang, Kewal Saluja, "Combating NBTI Degradation via Gate Sizing," isqed, pp.47-52, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007
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