8th International Symposium on Quality Electronic Design (ISQED'07) San Jose, California March 26-March 28 ISBN: 0-7695-2795-7
Semiconductor scaling has been driven by advances in both transistor and process technology, and may continue for the next decade down to 5~7 nm of gate length. In this context, it is necessary to predict how design technology will continue to exploit the added capability afforded by semiconductor scaling in coming years. Although predicting the future is extremely difficult, the best way is to review the past and to assess the key factors in the successes.
Citation:
Jeong-Taek Kong, "Tipping Point for New Design Technologies: DFM, Low Power and ESL," isqed, pp.9-14, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||