Programmable High Speed Multi-Level Simultaneous Bidirectional I/O

I
ISQED
2007
8th International Symposium on Quality Electronic Design (ISQED'07)
Abstract - Programmable High Speed Multi-Level Simultaneous Bidirectional I/O

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8th International Symposium on Quality Electronic Design (ISQED'07)

San Jose, California

March 26-March 28

ISBN: 0-7695-2795-7

	ASCII Text	x
	Yong Sin Kim, Sung-Mo Kang, "Programmable High Speed Multi-Level Simultaneous Bidirectional I/O," Quality Electronic Design, International Symposium on, pp. 416-419, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007.

	BibTex	x
	@article{ 10.1109/ISQED.2007.128, author = {Yong Sin Kim and Sung-Mo Kang}, title = {Programmable High Speed Multi-Level Simultaneous Bidirectional I/O}, journal ={Quality Electronic Design, International Symposium on}, volume = {0}, year = {2007}, isbn = {0-7695-2795-7}, pages = {416-419}, doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.128}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Quality Electronic Design, International Symposium on TI - Programmable High Speed Multi-Level Simultaneous Bidirectional I/O SN - 0-7695-2795-7 SP416 EP419 A1 - Yong Sin Kim, A1 - Sung-Mo Kang, PY - 2007 KW - null VL - 0 JA - Quality Electronic Design, International Symposium on ER -

Yong Sin Kim, Univ. of California, Santa Cruz, USA

Sung-Mo Kang, Univ. of California, Santa Cruz, USA

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2007.128

This paper describes a programmable high speed multi-level simultaneous bi-directional I/O. With programmable high speed differential current switching, the static current flow becomes dependent upon the number of bits in the outgoing data, from 0- bit to 2-bit. The pre-emphasis method was implemented to enhance the transmission speed. Simulation results based on 0.18?m CMOS process show the maximum data rate can be enhanced to 4.8Gb/s/pin. Timing window and voltage window are 480ps and 43mV, respectively.

Citation:

Yong Sin Kim, Sung-Mo Kang, "Programmable High Speed Multi-Level Simultaneous Bidirectional I/O," isqed, pp.416-419, 8th International Symposium on Quality Electronic Design (ISQED'07), 2007

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