Sixth International Symposium on Quality of Electronic Design (ISQED'05) Modeling Within-Die Spatial Correlation Effects for Process-Design Co-Optimization San Jose, California March 21-March 23 ISBN: 0-7695-2301-3
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.82
Within-die spatial correlation of device parameter values caused by manufacturing variations [1] has a significant impact on circuit performance. Based on experimental and simulation results, we (1) characterize the spatial correlation of gate length over a full-field range of horizontal and vertical separation; (2) develop a rudimentary spatial correlation model; and (3) investigate its impact on the variability of circuit performance.
Citation:
Paul Friedberg, Yu Cao, Jason Cain, Ruth Wang, Jan Rabaey, Costas Spanos, "Modeling Within-Die Spatial Correlation Effects for Process-Design Co-Optimization," isqed, pp.516-521, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||