Sixth International Symposium on Quality of Electronic Design (ISQED'05)
Modeling Within-Die Spatial Correlation Effects for Process-Design Co-Optimization
San Jose, California
March 21-March 23
ISBN: 0-7695-2301-3
DOI Bookmark:
http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.82
Within-die spatial correlation of device parameter values caused by manufacturing variations [1] has a significant impact on circuit performance. Based on experimental and simulation results, we (1) characterize the spatial correlation of gate length over a full-field range of horizontal and vertical separation; (2) develop a rudimentary spatial correlation model; and (3) investigate its impact on the variability of circuit performance.
Citation:
Paul Friedberg, Yu Cao, Jason Cain, Ruth Wang, Jan Rabaey, Costas Spanos, "Modeling Within-Die Spatial Correlation Effects for Process-Design Co-Optimization," isqed, pp.516-521, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005
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