Leakage Current Modeling in PD SOI Circuits

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Sixth International Symposium on Quality of Electronic Design (ISQED'05)

San Jose, California

March 21-March 23

ISBN: 0-7695-2301-3

	ASCII Text	x
	Mini Nanua, David Blaauw, Chanhee Oh, "Leakage Current Modeling in PD SOI Circuits," Quality Electronic Design, International Symposium on, pp. 113-117, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005.

	BibTex	x
	@article{ 10.1109/ISQED.2005.74, author = {Mini Nanua and David Blaauw and Chanhee Oh}, title = {Leakage Current Modeling in PD SOI Circuits}, journal ={Quality Electronic Design, International Symposium on}, volume = {0}, year = {2005}, isbn = {0-7695-2301-3}, pages = {113-117}, doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.74}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Quality Electronic Design, International Symposium on TI - Leakage Current Modeling in PD SOI Circuits SN - 0-7695-2301-3 SP113 EP117 A1 - Mini Nanua, A1 - David Blaauw, A1 - Chanhee Oh, PY - 2005 KW - null VL - 0 JA - Quality Electronic Design, International Symposium on ER -

Mini Nanua, Sun MicroSystems

David Blaauw, University of Michigan

Chanhee Oh, Nascentric Inc.

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.74

In this paper we demonstrate the transient behavior of off-state device leakage due to signal switching history in PD SOI devices. We address the leakage modeling for PD SOI circuits taking input switching history into account and demonstrate that the off-state power dissipation is a function of the device input duty cycle due to body voltage variations with switching history in SOI devices. We also demonstrate that the device off-state power dissipation can be 2.4 times higher than the power dissipation calculated with traditional steady state off-state device current.

Citation:

Mini Nanua, David Blaauw, Chanhee Oh, "Leakage Current Modeling in PD SOI Circuits," isqed, pp.113-117, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005

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