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Sixth International Symposium on Quality of Electronic Design (ISQED'05)
Charge-Based Core and the Model Architecture of BSIM5
San Jose, California
March 21-March 23
ISBN: 0-7695-2301-3
ASCII Text
x 
 
Jin He, Jane Xi, Mansun Chan, Hui Wan, Mohan Dunga, Babak Heydari, Ali M. Niknejad, Chenming Hu, "Charge-Based Core and the Model Architecture of BSIM5," Quality Electronic Design, International Symposium on, pp. 96-101, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005.
 
 
BibTex
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@article{ 10.1109/ISQED.2005.30,
author = {Jin He and Jane Xi and Mansun Chan and Hui Wan and Mohan Dunga and Babak Heydari and Ali M. Niknejad and Chenming Hu},
title = {Charge-Based Core and the Model Architecture of BSIM5},
journal ={Quality Electronic Design, International Symposium on},
volume = {0},
year = {2005},
isbn = {0-7695-2301-3},
pages = {96-101},
doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.30},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - Quality Electronic Design, International Symposium on
TI - Charge-Based Core and the Model Architecture of BSIM5
SN - 0-7695-2301-3
SP96
EP101
A1 - Jin He,
A1 - Jane Xi,
A1 - Mansun Chan,
A1 - Hui Wan,
A1 - Mohan Dunga,
A1 - Babak Heydari,
A1 - Ali M. Niknejad,
A1 - Chenming Hu,
PY - 2005
KW - null
VL - 0
JA - Quality Electronic Design, International Symposium on
ER -
 
Jin He, University of California, Berkeley, CA
Jane Xi, University of California, Berkeley, CA
Mansun Chan, University of California, Berkeley, CA
Hui Wan, University of California, Berkeley, CA
Mohan Dunga, University of California, Berkeley, CA
Babak Heydari, University of California, Berkeley, CA
Ali M. Niknejad, University of California, Berkeley, CA
Chenming Hu, University of California, Berkeley, CA
This paper outlines the charge-based core and the architecture of the BSIM5 MOSFET model for sub-100nm CMOS circuit simulation. The BSIM5 model is a continuous, completely symmetric and accurate non charge-sheet based MOS transistor model derived from the basic device physics including various physics effects. Comparison of the inversion charge between the BSIM5 prediction and self-consistent numerical solution shows good agreement in this paper. The demonstration of fully symmetry characteristics of BSIM5 in Gummel Symmetry Test, such as channel current and its high-order derivative, and charge and trans-capacitances in SPICE simulation, also implies BSIM5 is the physical symmetric MOSFET's model valid for RF-Analog circuit simulations.
Citation:
Jin He, Jane Xi, Mansun Chan, Hui Wan, Mohan Dunga, Babak Heydari, Ali M. Niknejad, Chenming Hu, "Charge-Based Core and the Model Architecture of BSIM5," isqed, pp.96-101, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005
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