Analytical Study of Impact Ionization and Subthreshold Current in Submicron n-MOSFET

	This Article
	Subscribers, please Login Purchase article: $19 PDF IEEE Xplore Subscribers RSS feed
	Share
	Email this Article to a friend
	Bibliographic References
	ASCII Text BibTex RefWorks Procite/RefMan/Endnote
	Add to:
	Digg Furl Spurl Blink Simpy Google Del.icio.us Y!MyWeb
	Search
	Similar Articles Articles by Bhavana Jharia Articles by S. Sarkar Articles by R. P. Agarwal

Sixth International Symposium on Quality of Electronic Design (ISQED'05)

San Jose, California

March 21-March 23

ISBN: 0-7695-2301-3

	ASCII Text	x
	Bhavana Jharia, S. Sarkar, R. P. Agarwal, "Analytical Study of Impact Ionization and Subthreshold Current in Submicron n-MOSFET," Quality Electronic Design, International Symposium on, pp. 72-76, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005.

	BibTex	x
	@article{ 10.1109/ISQED.2005.22, author = {Bhavana Jharia and S. Sarkar and R. P. Agarwal}, title = {Analytical Study of Impact Ionization and Subthreshold Current in Submicron n-MOSFET}, journal ={Quality Electronic Design, International Symposium on}, volume = {0}, year = {2005}, isbn = {0-7695-2301-3}, pages = {72-76}, doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.22}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Quality Electronic Design, International Symposium on TI - Analytical Study of Impact Ionization and Subthreshold Current in Submicron n-MOSFET SN - 0-7695-2301-3 SP72 EP76 A1 - Bhavana Jharia, A1 - S. Sarkar, A1 - R. P. Agarwal, PY - 2005 KW - null VL - 0 JA - Quality Electronic Design, International Symposium on ER -

Bhavana Jharia, Indian Institute of Technology, India

S. Sarkar, Indian Institute of Technology, India

R. P. Agarwal, Indian Institute of Technology, India

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.22

In this paper Effect of impact ionization in subthreshold operation of an n-MOSFET is studied. Analysis shows that the effect of impact ionization cannot be neglected in subthreshold region of operation of submicron MOSFET. This effect is enhanced at larger drain voltages. Gate bias and oxide thickness controls the effect of impact ionization. The effect of impact ionization is through the gate and drain bias dependence of the maximum electric field. Subthreshold current increases when gate oxide is thinned. This is because of the increase in impact ionization due to increase in electric field.

Citation:

Bhavana Jharia, S. Sarkar, R. P. Agarwal, "Analytical Study of Impact Ionization and Subthreshold Current in Submicron n-MOSFET," isqed, pp.72-76, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005

Peer Review Notice | Give Us Feedback

Usage of this product signifies your acceptance of the Terms of Use.