We propose a novel low power Charge Recycling SRAM (CR-SRAM) for portable TFT-LCD applications. In portable TFT-LCD applications, low power considerations are becoming more important for longer battery lifetime. For reducing the power consumption in SRAMs, the source-line, connected to the source terminals of the driver MOSFET's, is controlled, so that it is zero in the active mode and has a positive bias voltage in the stand-by mode. However, the overhead power consumed during the control of source-line voltage is considerable due to the large capacitive load on the source-line. Applying charge recycling technique to the source-line allows reducing the power dissipation of the source-biased SRAM. Moreover, by exploiting the sequential access pattern of TFT-LCD memory, the proposed CR-SRAM can efficiently reduce the power dissipation of the control circuit for charge recycling. The proposed CR-SRAM is implemented in a 0.18?m technology and shows 68% and 14% power reduction compared to Conventional SRAM (CON-SRAM) and Source-Biased SRAM (SB-SRAM), respectively. We also evaluate the power consumptions under various clock frequencies of row driver and temperatures. Experimental results show that the percentage of power savings due to charge recycling increases with the higher frequency and achieved a maximum of 25% at 250MHz.