Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature

	This Article
	Subscribers, please Login Purchase article: $19 PDF IEEE Xplore Subscribers RSS feed
	Share
	Email this Article to a friend
	Bibliographic References
	ASCII Text BibTex RefWorks Procite/RefMan/Endnote
	Add to:
	Digg Furl Spurl Blink Simpy Google Del.icio.us Y!MyWeb
	Search
	Similar Articles Articles by Xiaojun Li Articles by Joerg D. Walter Articles by Joseph B. Bernstein

Sixth International Symposium on Quality of Electronic Design (ISQED'05)

San Jose, California

March 21-March 23

ISBN: 0-7695-2301-3

	ASCII Text	x
	Xiaojun Li, Joerg D. Walter, Joseph B. Bernstein, "Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature," Quality Electronic Design, International Symposium on, pp. 496-502, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005.

	BibTex	x
	@article{ 10.1109/ISQED.2005.110, author = {Xiaojun Li and Joerg D. Walter and Joseph B. Bernstein}, title = {Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature}, journal ={Quality Electronic Design, International Symposium on}, volume = {0}, year = {2005}, isbn = {0-7695-2301-3}, pages = {496-502}, doi = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.110}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Quality Electronic Design, International Symposium on TI - Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature SN - 0-7695-2301-3 SP496 EP502 A1 - Xiaojun Li, A1 - Joerg D. Walter, A1 - Joseph B. Bernstein, PY - 2005 KW - null VL - 0 JA - Quality Electronic Design, International Symposium on ER -

Xiaojun Li, University of Maryland, College Park, MD

Joerg D. Walter, University of Maryland, College Park, MD

Joseph B. Bernstein, University of Maryland, College Park, MD

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2005.110

The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring oscillator under different stress conditions to determine the accurate scaling relations of these operating parameters. Reduced voltage, frequency and temperature applied to a device will reduce its internal stresses, leading to an improvement of device reliability. Since all these variations for a single device are proportional, the ratios can be applied to a full circuit and help to simplify the derating model and formulate practical design guidelines for system developers to derate devices for long life applications.

Citation:

Xiaojun Li, Joerg D. Walter, Joseph B. Bernstein, "Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature," isqed, pp.496-502, Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005

Peer Review Notice | Give Us Feedback

Usage of this product signifies your acceptance of the Terms of Use.