First International Symposium on Quality of Electronic Design GLACIER: A Hot Carrier Gate Level Circuit Characterization and Simulation System for VLSI Design San Jose, California March 20-March 22 ISBN: 0-7695-0525-2
Gate level circuit simulation on hot carrier degradation is introduced for the first time by the GLACIER system presented in this paper. The inherent advantages such as high speed and high capacity of the gate level simulation as compared to the traditional transistor level hot carrier simulation makes the design-in reliability simulation possible and practical for the deep submicron VLSI circuit designs with millions of transistors. By virtue of a unique ratio based modeling technique, GLACIER system provides a very high accuracy, which is mostly within 1% difference of transistor level hot carrier simulation.
Index Terms:
Hot Carrier Effect, Gate level modeling, Gate level simulation, Circuit reliability simulation, VLSI
Citation:
Lifeng Wu, Jingkun Fang, Heting Yan, Ping Chen, Alvin I-Hsien Chen, Yoshifumi Okamoto, Chune-Sin Yeh, Zhihong Liu, Nobufusa Iwanishi, Norio Koike Hirokazu Yonezawa, Yoshiyuki Kawakami, "GLACIER: A Hot Carrier Gate Level Circuit Characterization and Simulation System for VLSI Design," isqed, pp.73, First International Symposium on Quality of Electronic Design, 2000 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||