This paper proposes analog soft-information decoding circuits for error protection in multi-level memories, providing stronger error protection than binary error-correcting codes. The cell capacitance can then be reduced without an increase in the soft error rate. Analog decoders perform soft-information decoding with very low area requirements. We introduce a multi-level analog interface circuit for analog decoding of MLDRAM signals. We also apply basic information theory to reveal the possibilities and limitations of coding in multi-level memories.