35th International Symposium on Multiple-Valued Logic (ISMVL'05)
A Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors
University of Calgary, Canada
May 19-May 21
ISBN: 0-7695-2336-6
This paper presents a circuit design of a two-bit-percell Content-Addressable Memory (CAM) using Single-Electron Transistors (SETs). The key ideas of the proposed CAM architecture are (i) four-level data storage function implementing by a SET-based static memory cell and (ii) four-level data matching function employing periodic drain-current characteristics of SETs with dynamic phase-shift control. A simple multi-gate SET can be used to realize four-level data matching within a compact CAM cell circuit. As a result, the proposed two-bit-per-cell CAM architecture reduces the number of transistors to 1/3 compared with the conventional CAM architecture.
Citation:
Katsuhiko Degawa, Takafumi Aoki, Hiroshi Inokawa, Tatsuo Higuchi, Yasuo Takahashi, "A Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors," ismvl, pp.32-38, 35th International Symposium on Multiple-Valued Logic (ISMVL'05), 2005