33rd International Symposium on Multiple-Valued Logic Experimental and Simulation Studies of Single-Electron-Transistor-Based Multiple-Valued Logic Tokyo, Japan May 16-May 19 ISBN: 0-7695-1918-0
Periodic drain current-gate voltage characteristics of single-electron transistors (SETs) were utilized to construct basic components of multiple-valued logic (MVL), such as a universal literal gate and a quantizer. In order to supplement the small gain and the small applicable voltage of the SET, hybrid SET-MOSFET scheme is proposed and demonstrated experimentally using CMOS-compatible pattern-dependent oxidation (PADOX) technology. We also succeeded in reproducing the results using a SPICE circuit simulator with a compact analytical SET model, and estimated the performance of the proposed MVL.
Citation:
Hiroshi Inokawa, Yasuo Takahashi, "Experimental and Simulation Studies of Single-Electron-Transistor-Based Multiple-Valued Logic," ismvl, pp.259, 33rd International Symposium on Multiple-Valued Logic, 2003 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||