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33rd International Symposium on Multiple-Valued Logic
Experimental and Simulation Studies of Single-Electron-Transistor-Based Multiple-Valued Logic
Tokyo, Japan
May 16-May 19
ISBN: 0-7695-1918-0
Hiroshi Inokawa, NTT Corporation
Yasuo Takahashi, NTT Corporation
Periodic drain current-gate voltage characteristics of single-electron transistors (SETs) were utilized to construct basic components of multiple-valued logic (MVL), such as a universal literal gate and a quantizer. In order to supplement the small gain and the small applicable voltage of the SET, hybrid SET-MOSFET scheme is proposed and demonstrated experimentally using CMOS-compatible pattern-dependent oxidation (PADOX) technology. We also succeeded in reproducing the results using a SPICE circuit simulator with a compact analytical SET model, and estimated the performance of the proposed MVL.
Citation:
Hiroshi Inokawa, Yasuo Takahashi, "Experimental and Simulation Studies of Single-Electron-Transistor-Based Multiple-Valued Logic," ismvl, pp.259, 33rd International Symposium on Multiple-Valued Logic, 2003
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