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13th IEEE International On-Line Testing Symposium (IOLTS 2007)
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions
Heraklion, Crete, Greece
July 08-July 11
ISBN: 0-7695-2918-6
ASCII Text
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M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami, M. Maccarrone, "Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions," IEEE International On-Line Testing Symposium, pp. 146-151, 13th IEEE International On-Line Testing Symposium (IOLTS 2007), 2007.
 
 
BibTex
x
 
@article{ 10.1109/IOLTS.2007.59,
author = {M. Bagatin and G. Cellere and S. Gerardin and A. Paccagnella and A. Visconti and S. Beltrami and M. Maccarrone},
title = {Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions},
journal ={IEEE International On-Line Testing Symposium},
volume = {0},
year = {2007},
isbn = {0-7695-2918-6},
pages = {146-151},
doi = {http://doi.ieeecomputersociety.org/10.1109/IOLTS.2007.59},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - IEEE International On-Line Testing Symposium
TI - Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions
SN - 0-7695-2918-6
SP146
EP151
A1 - M. Bagatin,
A1 - G. Cellere,
A1 - S. Gerardin,
A1 - A. Paccagnella,
A1 - A. Visconti,
A1 - S. Beltrami,
A1 - M. Maccarrone,
PY - 2007
KW - null
VL - 0
JA - IEEE International On-Line Testing Symposium
ER -
 
M. Bagatin, Padova University, Italy
G. Cellere, Padova University, Italy
S. Gerardin, Padova University, Italy
A. Paccagnella, Padova University, Italy
A. Visconti, STMicroelectronics, Italy
S. Beltrami, STMicroelectronics, Italy
M. Maccarrone, STMicroelectronics, Italy
We tested a commercial 1Gbit 90nm NAND memory under exposure to a constant flux of heavy ions, aiming to study its behaviour in the space environment. We identified and classified different types of errors under various operating conditions. We observed single bit upsets both in the floating gate array and in the page buffer, alongside with functional interruptions during program and, to a lesser extent, erase operations. Our results provide some insight on possible issues which may arise also at sea-level with future (and more sensitive) Flash generations.
Citation:
M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami, M. Maccarrone, "Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions," iolts, pp.146-151, 13th IEEE International On-Line Testing Symposium (IOLTS 2007), 2007
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