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13th IEEE International On-Line Testing Symposium (IOLTS 2007)
Multiple Event Transient Induced by Nuclear Reactions in CMOS Logic Cells
Heraklion, Crete, Greece
July 08-July 11
ISBN: 0-7695-2918-6
ASCII Text
x 
 
C. Rusu, A. Bougerol, L. Anghel, C. Weulerse, N. Buard, S. Benhammadi, N. Renaud, G. Hubert, F. Wrobel, T. Carriere, R. Gaillard, "Multiple Event Transient Induced by Nuclear Reactions in CMOS Logic Cells," IEEE International On-Line Testing Symposium, pp. 137-145, 13th IEEE International On-Line Testing Symposium (IOLTS 2007), 2007.
 
 
BibTex
x
 
@article{ 10.1109/IOLTS.2007.46,
author = {C. Rusu and A. Bougerol and L. Anghel and C. Weulerse and N. Buard and S. Benhammadi and N. Renaud and G. Hubert and F. Wrobel and T. Carriere and R. Gaillard},
title = {Multiple Event Transient Induced by Nuclear Reactions in CMOS Logic Cells},
journal ={IEEE International On-Line Testing Symposium},
volume = {0},
year = {2007},
isbn = {0-7695-2918-6},
pages = {137-145},
doi = {http://doi.ieeecomputersociety.org/10.1109/IOLTS.2007.46},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - IEEE International On-Line Testing Symposium
TI - Multiple Event Transient Induced by Nuclear Reactions in CMOS Logic Cells
SN - 0-7695-2918-6
SP137
EP145
A1 - C. Rusu,
A1 - A. Bougerol,
A1 - L. Anghel,
A1 - C. Weulerse,
A1 - N. Buard,
A1 - S. Benhammadi,
A1 - N. Renaud,
A1 - G. Hubert,
A1 - F. Wrobel,
A1 - T. Carriere,
A1 - R. Gaillard,
PY - 2007
KW - null
VL - 0
JA - IEEE International On-Line Testing Symposium
ER -
 
C. Rusu, TIMA Laboratory, France
A. Bougerol, EADS, France
L. Anghel, TIMA Laboratory, France
C. Weulerse, EADS, France
N. Buard, EADS, France
S. Benhammadi, TIMA Laboratory, France
N. Renaud, ATMEL
G. Hubert, EADS, France
F. Wrobel, University of Nice-Sophia Antipolis
T. Carriere, EADS Astrium Space Transportation
R. Gaillard, INFODUC
This paper presents a methodology for analyzing the behavior of nanometer technologies regarding "Multiple Event Transients" (MET) caused by nuclear reaction induced by atmospheric neutrons. For the first time, currents collected by several sensitive areas of an ASIC cell resulting from a nuclear reaction are addressed by simulation. Libraries of several thousand types of currents are obtained for neutron energy range between 1 and 200 MeV. Group of currents are simultaneously injected at SPICE level and their effects are monitored on the cell output. Following an amplitude criterion, output transient duration and associated occurrence probability are recorded. A 130nm NAND gate from ATMEL Corporation is first used to illustrate the methodology and a comparison between Single Event Transients and Multiple Event Transients effects is presented. Finally, results regarding five different combinational cells in the ATMEL 130nm library are presented and discussed.
Citation:
C. Rusu, A. Bougerol, L. Anghel, C. Weulerse, N. Buard, S. Benhammadi, N. Renaud, G. Hubert, F. Wrobel, T. Carriere, R. Gaillard, "Multiple Event Transient Induced by Nuclear Reactions in CMOS Logic Cells," iolts, pp.137-145, 13th IEEE International On-Line Testing Symposium (IOLTS 2007), 2007
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