12th IEEE International On-Line Testing Symposium (IOLTS'06)
Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells
Lake of Como, Italy
July 10-July 12
ISBN: 0-7695-2620-9
N. Buard, EADS, Corporate Research Center
F. Wrobel, University of Nice-Sophia Antipolis
This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in Complementary Metal Oxide Semiconductor (CMOS) logic circuits: TMC DASIE (Transient Monte-Carlo Detailed Analysis of Secondary Ion Effects). The production and effects of Single-Event Transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.
Citation:
G. Hubert, A. Bougerol, F. Miller, N. Buard, L. Anghel, T. Carriere, F. Wrobel, R. Gaillard, "Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells," iolts, pp.63-74, 12th IEEE International On-Line Testing Symposium (IOLTS'06), 2006