12th IEEE International On-Line Testing Symposium (IOLTS'06) Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells Lake of Como, Italy July 10-July 12 ISBN: 0-7695-2620-9
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/IOLTS.2006.51
This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in Complementary Metal Oxide Semiconductor (CMOS) logic circuits: TMC DASIE (Transient Monte-Carlo Detailed Analysis of Secondary Ion Effects). The production and effects of Single-Event Transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.
Citation:
G. Hubert, A. Bougerol, F. Miller, N. Buard, L. Anghel, T. Carriere, F. Wrobel, R. Gaillard, "Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells," iolts, pp.63-74, 12th IEEE International On-Line Testing Symposium (IOLTS'06), 2006 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||