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13th International Conference on VLSI Design
Silicon Heterostructure Devices for RF Wireless Communication
Calcutta, India
January 04-January 07
ISBN: 0-7695-0487-6
ASCII Text
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B. Senapati, C.K. Maiti, N.B. Chakrabarti, "Silicon Heterostructure Devices for RF Wireless Communication," VLSI Design, International Conference on, pp. 488, 13th International Conference on VLSI Design, 2000.
 
 
BibTex
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@article{ 10.1109/ICVD.2000.812655,
author = {B. Senapati and C.K. Maiti and N.B. Chakrabarti},
title = {Silicon Heterostructure Devices for RF Wireless Communication},
journal ={VLSI Design, International Conference on},
volume = {0},
year = {2000},
issn = {1063-9667},
pages = {488},
doi = {http://doi.ieeecomputersociety.org/10.1109/ICVD.2000.812655},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - VLSI Design, International Conference on
TI - Silicon Heterostructure Devices for RF Wireless Communication
SN - 1063-9667
SP
EP
A1 - B. Senapati,
A1 - C.K. Maiti,
A1 - N.B. Chakrabarti,
PY - 2000
KW - RFICs
KW - SiGe-HBT
KW - planar inductor
KW - RF amplifier
VL - 0
JA - VLSI Design, International Conference on
ER -
 
B. Senapati, Indian Institute of Technology
C.K. Maiti, Indian Institute of Technology
N.B. Chakrabarti, Indian Institute of Technology
Wireless communication of high speed data in UHF-microwave region requires RFIC implementation of the front end for low cost consistent with high performance. The suitability of silicon based devices and circuits, in particular Si/SiGe heterostructures, is examined in this paper. Issues related to the change of technology for RFICs are considered and it is shown that scaled SiGe-HBTs satisfy the requirements of transconductance/gain, f$_T$/f$_{max}$ and noise figure. Results of simulation of SiGe-HBT devices, amplifiers using them, and also the noise figure have been presented.
Index Terms:
RFICs, SiGe-HBT, planar inductor, RF amplifier
Citation:
B. Senapati, C.K. Maiti, N.B. Chakrabarti, "Silicon Heterostructure Devices for RF Wireless Communication," vlsid, pp.488, 13th International Conference on VLSI Design, 2000
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