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Eleventh International Conference on VLSI Design: VLSI for Signal Processing
Circuit Design using Resonant Tunneling Diodes
India
January 04-January 07
ISBN: 0-8186-8224-8
Pinaki Mazumder, The University of Michigan
Shriram Kulkarni, The University of Michigan
Mayukh Bhattacharya, The University of Michigan
Alejandro Gonzalez, The University of Michigan
Picosecond switching speeds and folded current-voltage characteristics have made quantum tunneling devices promising alternatives for high-speed and compact VLSI circuit design. This paper describes new bistable digital logic circuit topologies that use resonant tunneling diodes (RTDs) in conjunction with hetero-junction bipolar transistors (HBTs) and modulation-doped field effect transistors (MODFETs). The designed circuits include a single-gate, self-latching MAJORITY function besides basic NAND, NOR and inverter gates. The application of these circuits in the design of high-performance adders and parallel correlators is discussed. We also review multiple-valued logic (MVL) applications of RTDs that achieve significant compaction in terms of device count over comparable binary logic implementations in conventional technologies. These include a four-valued 4:1 multiplexer using 13 resonant tunneling bipolar transistors (RTBTs) and HBTs, a mask programmable four-valued, single-input gate using 4 RTDs and 14 HBTs, and a four-step countdown circuit using 1 RTD and 3 HBTs.
Index Terms:
Nanoelectronics, Quantum device, Resonant Tunneling Diode, Pipelining, Multiple-Valued Logic.
Citation:
Pinaki Mazumder, Shriram Kulkarni, Mayukh Bhattacharya, Alejandro Gonzalez, "Circuit Design using Resonant Tunneling Diodes," vlsid, pp.501, Eleventh International Conference on VLSI Design: VLSI for Signal Processing, 1998
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