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9th International Conference on VLSI Design: VLSI in Mobile Communication
A Very High Gain Bandwidth Product Fully Differential Amplifier
Bangalore, INDIA
January 03-January 06
ISBN: 0-8186-7228-5
J. Weiss, SGS-THOMSON Microelectronics F-38019 Grenoble Cedex - France.
B. Majoux, SGS-THOMSON Microelectronics F-38019 Grenoble Cedex - France.
G. Bouvier, LTIRF - INPG F-38031 Grenoble Cedex - France
This paper deals with a novel DC-coupled, large bandwidth, fully differential amplifier dedicated to industrial applications. A family of integrated fully differential amplifiers has been developed in a 1.2um, 6GHz fT , BiCMOS technology. The stability/gain compromise is improved thanks to on-chip feedback resistors, whereas the gain is doubled by means of connecting directly on chip both of these amplifiers. Measurements on a "cascade" show a 44dB gain versus a 300MHz -3dB bandwidth (that means literally a 47 GHz gain bandwidth product).
Index Terms:
Analog circuits - Design - High Speed - Operational Amplifier.
Citation:
J. Weiss, B. Majoux, G. Bouvier, "A Very High Gain Bandwidth Product Fully Differential Amplifier," vlsid, pp.99, 9th International Conference on VLSI Design: VLSI in Mobile Communication, 1996
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