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8th International Conference on VLSI Design
Analysis of temperature dependence of Si-Ge HBT
New Delhi, India
January 04-January 07
ISBN: 0-8186-6905-5
ASCII Text
x 
 
G.H.R. Krishna, A.K. Aditya, N.B. Chakrabarti, S. Banerjee, "Analysis of temperature dependence of Si-Ge HBT," VLSI Design, International Conference on, pp. 268, 8th International Conference on VLSI Design, 1995.
 
 
BibTex
x
 
@article{ 10.1109/ICVD.1995.512122,
author = {G.H.R. Krishna and A.K. Aditya and N.B. Chakrabarti and S. Banerjee},
title = {Analysis of temperature dependence of Si-Ge HBT},
journal ={VLSI Design, International Conference on},
volume = {0},
year = {1995},
isbn = {0-8186-6905-5},
pages = {268},
doi = {http://doi.ieeecomputersociety.org/10.1109/ICVD.1995.512122},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - VLSI Design, International Conference on
TI - Analysis of temperature dependence of Si-Ge HBT
SN - 0-8186-6905-5
SP
EP
A1 - G.H.R. Krishna,
A1 - A.K. Aditya,
A1 - N.B. Chakrabarti,
A1 - S. Banerjee,
PY - 1995
KW - semiconductor materials; heterojunction bipolar transistors; finite element analysis; semiconductor device models; Ge-Si alloys; simulation; thermal analysis; temperature dependence; FEM; heterojunction bipolar transistors; Ge mole-fraction; two dimensional device simulator; BISOF; finite element method; current gain; graded HBT; 200 to 300 K; SiGe
VL - 0
JA - VLSI Design, International Conference on
ER -
 
G.H.R. Krishna, Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
A.K. Aditya, Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
N.B. Chakrabarti, Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
S. Banerjee, Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
In this paper the dependence of characteristics of SiGe heterojunction bipolar transistors on Ge mole-fraction and also variation of gain with temperature are presented. The simulation is carried out using a two dimensional device simulator, BISOF, based on finite element method. It is observed that the current gain of graded HBT improves when the temperature falls from 300 K to 200 K which matches well with the available experimental results.
Index Terms:
semiconductor materials; heterojunction bipolar transistors; finite element analysis; semiconductor device models; Ge-Si alloys; simulation; thermal analysis; temperature dependence; FEM; heterojunction bipolar transistors; Ge mole-fraction; two dimensional device simulator; BISOF; finite element method; current gain; graded HBT; 200 to 300 K; SiGe
Citation:
G.H.R. Krishna, A.K. Aditya, N.B. Chakrabarti, S. Banerjee, "Analysis of temperature dependence of Si-Ge HBT," vlsid, pp.268, 8th International Conference on VLSI Design, 1995
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