Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array

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	Similar Articles Articles by P. Sawhney Articles by H. Rasheed

8th International Conference on VLSI Design

New Delhi, India

January 04-January 07

ISBN: 0-8186-6905-5

	ASCII Text	x
	P. Sawhney, H. Rasheed, "Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array," VLSI Design, International Conference on, pp. 191, 8th International Conference on VLSI Design, 1995.

	BibTex	x
	@article{ 10.1109/ICVD.1995.512104, author = {P. Sawhney and H. Rasheed}, title = {Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array}, journal ={VLSI Design, International Conference on}, volume = {0}, year = {1995}, isbn = {0-8186-6905-5}, pages = {191}, doi = {http://doi.ieeecomputersociety.org/10.1109/ICVD.1995.512104}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - VLSI Design, International Conference on TI - Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array SN - 0-8186-6905-5 SP EP A1 - P. Sawhney, A1 - H. Rasheed, PY - 1995 KW - SRAM chips; application specific integrated circuits; integrated circuit design; circuit CAD; static RAM generators; automatic generator characterisation tool; triple-metal embedded array; module generators; metallized SRAMs; single-port static RAMs; dual-port static RAMs; ASIC design; user-defined size; aspect ratio; SRAM chips; 0.5 micron VL - 0 JA - VLSI Design, International Conference on ER -

P. Sawhney, SGS-Thomson Microelectron., New Delhi, India

H. Rasheed, SGS-Thomson Microelectron., New Delhi, India

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ICVD.1995.512104

This paper describes the design and development of module generators for metallized single-port and dual-port static RAMs (SPRAM and DPRAM) for a 0.5 micron embedded-array family. These generators offer an ASIC designer the ability to choose RAMs of user-defined size with some flexibility on the aspect ratio. An automatic generator characterisation (AGC) tool developed to efficiently characterize RAM generators is discussed.

Index Terms:

SRAM chips; application specific integrated circuits; integrated circuit design; circuit CAD; static RAM generators; automatic generator characterisation tool; triple-metal embedded array; module generators; metallized SRAMs; single-port static RAMs; dual-port static RAMs; ASIC design; user-defined size; aspect ratio; SRAM chips; 0.5 micron

Citation:

P. Sawhney, H. Rasheed, "Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array," vlsid, pp.191, 8th International Conference on VLSI Design, 1995

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