2005 International Conference on MEMS,NANO and Smart Systems Patterning Nanometer Resist Features on Planar and Topography Substrates Using The 2-Step NERIME FIB Top Surface Imaging Process Banff, Alberta, Canada July 24-July 27 ISBN: 0-7695-2398-6
The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process has been previously reported as an excellent technique for patterning nanometer scale features in DNQ/novolak based photoresists on silicon substrates. In this paper we demonstrate that the 2-step NERIME process can be used to pattern nanometer scale resist features on different substrate materials and topography substrates.
Citation:
Khalil Arshak, Stephen F. Gilmartin, Damian Collins, Olga Korostynska, Arous Arshak, "Patterning Nanometer Resist Features on Planar and Topography Substrates Using The 2-Step NERIME FIB Top Surface Imaging Process," icmens, pp.159-166, 2005 International Conference on MEMS,NANO and Smart Systems, 2005 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||