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2005 International Conference on MEMS,NANO and Smart Systems
Patterning Nanometer Resist Features on Planar and Topography Substrates Using The 2-Step NERIME FIB Top Surface Imaging Process
Banff, Alberta, Canada
July 24-July 27
ISBN: 0-7695-2398-6
Khalil Arshak, University of Limerick, Ireland
Stephen F. Gilmartin, Analog Devices, Raheen, Limerick, Ireland
Damian Collins, Analog Devices, Raheen, Limerick, Ireland
Olga Korostynska, University of Limerick, Ireland
Arous Arshak, University of Limerick, Ireland

The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process has been previously reported as an excellent technique for patterning nanometer scale features in DNQ/novolak based photoresists on silicon substrates. In this paper we demonstrate that the 2-step NERIME process can be used to pattern nanometer scale resist features on different substrate materials and topography substrates.

Citation:
Khalil Arshak, Stephen F. Gilmartin, Damian Collins, Olga Korostynska, Arous Arshak, "Patterning Nanometer Resist Features on Planar and Topography Substrates Using The 2-Step NERIME FIB Top Surface Imaging Process," icmens, pp.159-166, 2005 International Conference on MEMS,NANO and Smart Systems, 2005
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