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2005 International Conference on MEMS,NANO and Smart Systems
ON THE EFFECT OF CATIONIC SURFACTANTS IN THE RINSE TO REDUCE PATTERN COLLAPSE IN HIGH ASPECT RATIO PATTERNING OF PHOTORESISTS
Banff, Alberta, Canada
July 24-July 27
ISBN: 0-7695-2398-6
ASCII Text
x 
 
K. Grundke, A. Drechsler, N. Petong, C. Bellmann, M. Stamm, O. Wunnicke, J Reichelt, I. M?ge, B. Pinter, T. Pearce, M. Voigt, "ON THE EFFECT OF CATIONIC SURFACTANTS IN THE RINSE TO REDUCE PATTERN COLLAPSE IN HIGH ASPECT RATIO PATTERNING OF PHOTORESISTS," MEMS, NANO, and Smart Systems, International Conference on, pp. 14-15, 2005 International Conference on MEMS,NANO and Smart Systems, 2005.
 
 
BibTex
x
 
@article{ 10.1109/ICMENS.2005.93,
author = {K. Grundke and A. Drechsler and N. Petong and C. Bellmann and M. Stamm and O. Wunnicke and J Reichelt and I. M?ge and B. Pinter and T. Pearce and M. Voigt},
title = {ON THE EFFECT OF CATIONIC SURFACTANTS IN THE RINSE TO REDUCE PATTERN COLLAPSE IN HIGH ASPECT RATIO PATTERNING OF PHOTORESISTS},
journal ={MEMS, NANO, and Smart Systems, International Conference on},
volume = {0},
year = {2005},
isbn = {0-7695-2398-6},
pages = {14-15},
doi = {http://doi.ieeecomputersociety.org/10.1109/ICMENS.2005.93},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - MEMS, NANO, and Smart Systems, International Conference on
TI - ON THE EFFECT OF CATIONIC SURFACTANTS IN THE RINSE TO REDUCE PATTERN COLLAPSE IN HIGH ASPECT RATIO PATTERNING OF PHOTORESISTS
SN - 0-7695-2398-6
SP14
EP15
A1 - K. Grundke,
A1 - A. Drechsler,
A1 - N. Petong,
A1 - C. Bellmann,
A1 - M. Stamm,
A1 - O. Wunnicke,
A1 - J Reichelt,
A1 - I. M?ge,
A1 - B. Pinter,
A1 - T. Pearce,
A1 - M. Voigt,
PY - 2005
KW - null
VL - 0
JA - MEMS, NANO, and Smart Systems, International Conference on
ER -
 
K. Grundke, Leibniz-Institut f?r Polymerforschung Dresden e.V., Hohe Str. 6, 01069 Dresden, Germany
A. Drechsler, Leibniz-Institut f?r Polymerforschung Dresden e.V., Hohe Str. 6, 01069 Dresden, Germany
N. Petong, Leibniz-Institut f?r Polymerforschung Dresden e.V., Hohe Str. 6, 01069 Dresden, Germany
C. Bellmann, Leibniz-Institut f?r Polymerforschung Dresden e.V., Hohe Str. 6, 01069 Dresden, Germany
M. Stamm, Leibniz-Institut f?r Polymerforschung Dresden e.V., Hohe Str. 6, 01069 Dresden, Germany
O. Wunnicke, Infineon Technologies SC300, Koenigsbruecker Str. 180, 01099 Dresden, Germany
J Reichelt, Infineon Technologies SC300, Koenigsbruecker Str. 180, 01099 Dresden, Germany
I. M?ge, Infineon Technologies SC300, Koenigsbruecker Str. 180, 01099 Dresden, Germany
B. Pinter, Infineon Technologies SC300, Koenigsbruecker Str. 180, 01099 Dresden, Germany
T. Pearce, Infineon Technologies SC300, Koenigsbruecker Str. 180, 01099 Dresden, Germany
M. Voigt, Infineon Technologies SC300, Koenigsbruecker Str. 180, 01099 Dresden, Germany

Surface properties of photoresist lines are of particular interest in future semiconductor applications. As the critical dimension in optical lithography shrinks below 100 nm the influence of surface phenomena on the physical properties of the resist structures is growing. One serious problem in high aspect ratio patterning of photoresists is the pattern collapse. Due to the small width of the lines compared to their height, the mechanical stability of the photoresist structures decreases and may lead to collapse. The pattern collapse is known to be caused by unbalanced capillary forces between the lines during drying of the rinse liquid after wet development.

Citation:
K. Grundke, A. Drechsler, N. Petong, C. Bellmann, M. Stamm, O. Wunnicke, J Reichelt, I. M?ge, B. Pinter, T. Pearce, M. Voigt, "ON THE EFFECT OF CATIONIC SURFACTANTS IN THE RINSE TO REDUCE PATTERN COLLAPSE IN HIGH ASPECT RATIO PATTERNING OF PHOTORESISTS," icmens, pp.14-15, 2005 International Conference on MEMS,NANO and Smart Systems, 2005
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