In this paper, we present an analysis of resistive-open defects in the sense amplifier of SRAMs designed with the Infineon 65nm technology. From manufacturing data, we show that in some cases, a resistive-open defect may lead to a new type of dynamic behavior which has never been published in the past. This faulty behavior can be modeled as a dynamic two-cell Incorrect Read Fault (d2cIRF). Such d2cIRF is the consequence of a failure in the sense amplifier which prevents it to perform any read operations. We show that it requires a specific sequence of read operations to be detected. Results of electrical simulations are presented to give a complete understanding of such a faulty behavior. Finally, a possible March test solution is presented to allow the detection of d2cIRFs in all sense amplifiers of an SRAM.