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9th EUROMICRO Conference on Digital System Design (DSD'06)
Design Guides for a Correct DC Operation in RTD-based Threshold Gates
Cavtat near Dubrovnik, Croatia
August 30-September 01
ISBN: 0-7695-2609-8
Jos? M. Quintana, Centro Nacional de Microelectr?nica, Spain
Mar?a J. Avedillo, Centro Nacional de Microelectr?nica, Spain
Juan N?, Centro Nacional de Microelectr?nica, Spain
A correct DC operation is essential before analyzing other aspects of the circuit behavior. This paper analyzes how the presence of the HFET transistor modifies the DC operation of follower circuits based on MOBILE, and can prevent its correct operation. On the basis of this analysis, guidelines for the design of threshold gates which are implemented as a generalization of the follower circuit topology are derived.
Citation:
Jos? M. Quintana, Mar?a J. Avedillo, Juan N?, "Design Guides for a Correct DC Operation in RTD-based Threshold Gates," dsd, pp.530-536, 9th EUROMICRO Conference on Digital System Design (DSD'06), 2006
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