Soft Errors induced by single heavy ions in Floating Gate memory arrays

D
DFT
2005
20th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'05)
Abstract - Soft Errors induced by single heavy ions in Floating Gate memory arrays

	This Article
	Subscribers, please Login Purchase article: $19 PDF IEEE Xplore Subscribers RSS feed
	Share
	Email this Article to a friend
	Bibliographic References
	ASCII Text BibTex RefWorks Procite/RefMan
	Add to:
	Digg Furl Spurl Blink Simpy Google Del.icio.us Y!MyWeb
	Search
	Similar Articles Articles by G. Cellere Articles by A. Paccagnella Articles by A. Visconti Articles by M. Bonanomi

20th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'05)

Monterey, California

October 03-October 05

ISBN: 0-7695-2464-8

	ASCII Text	x
	G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, "Soft Errors induced by single heavy ions in Floating Gate memory arrays," Defect and Fault-Tolerance in VLSI Systems, IEEE International Symposium on, pp. 275-284, 20th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'05), 2005.

	BibTex	x
	@article{ 10.1109/DFTVS.2005.62, author = {G. Cellere and A. Paccagnella and A. Visconti and M. Bonanomi}, title = {Soft Errors induced by single heavy ions in Floating Gate memory arrays}, journal ={Defect and Fault-Tolerance in VLSI Systems, IEEE International Symposium on}, volume = {0}, year = {2005}, isbn = {0-7695-2464-8}, pages = {275-284}, doi = {http://doi.ieeecomputersociety.org/10.1109/DFTVS.2005.62}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Defect and Fault-Tolerance in VLSI Systems, IEEE International Symposium on TI - Soft Errors induced by single heavy ions in Floating Gate memory arrays SN - 0-7695-2464-8 SP275 EP284 A1 - G. Cellere, A1 - A. Paccagnella, A1 - A. Visconti, A1 - M. Bonanomi, PY - 2005 KW - null VL - 0 JA - Defect and Fault-Tolerance in VLSI Systems, IEEE International Symposium on ER -

G. Cellere, Padova University

A. Paccagnella, Padova University

A. Visconti, STMicroelectronics Central R&D

M. Bonanomi, STMicroelectronics Central R&D

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DFTVS.2005.62

Single, high-energy ions can induce large charge loss from Floating Gates used as basic storage elements in nonvolatile memory cells. The charge loss greatly exceeds that calculated by using conventional models based on generation and recombination of charge. Further, the ion locally damages the tunnel oxide, leading to degradation of retention properties of the Floating Gate over long times. This mechanism has important implications to design fault tolerant Floating Gate memories which should be operated in radiation harsh environment.

Citation:

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, "Soft Errors induced by single heavy ions in Floating Gate memory arrays," dft, pp.275-284, 20th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT'05), 2005

Peer Review Notice | Give Us Feedback

Usage of this product signifies your acceptance of the Terms of Use.