4th IEEE International Symposium on Electronic Design, Test and Applications (delta 2008) Design of a Low-Voltage CMOS Charge Pump January 23-January 25 ISBN: 978-0-7695-3110-6
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DELTA.2008.48
A charge pump based on the cross-coupled structure generates a 2? VDD output. The circuit delivering 10 mA@VDD = 0.9 V from a single NiMH battery is designed in a commercial 0.35 ?m CMOS process. The design operates at a supply voltage as low as VDD = 0.9 V with efficiency of better than 80% and the maximum VDD is 1.4 V. The implementation method of the cross-coupled charge pump is summarized in this paper.
Index Terms:
Charge pump, efficiency
Citation:
Chun Yu Cheng, Ka Nang Leung, Yi Ki Sun, Pui Ying Or, "Design of a Low-Voltage CMOS Charge Pump," delta, pp.342-345, 4th IEEE International Symposium on Electronic Design, Test and Applications (delta 2008), 2008 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||