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4th IEEE International Symposium on Electronic Design, Test and Applications (delta 2008)
Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor
January 23-January 25
ISBN: 978-0-7695-3110-6
ASCII Text
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W. M. Tang, C. H. Leung, P. T. Lai, "Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor," Electronic Design, Test and Applications, IEEE International Workshop on, pp. 171-174, 4th IEEE International Symposium on Electronic Design, Test and Applications (delta 2008), 2008.
 
 
BibTex
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@article{ 10.1109/DELTA.2008.28,
author = {W. M. Tang and C. H. Leung and P. T. Lai},
title = {Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor},
journal ={Electronic Design, Test and Applications, IEEE International Workshop on},
volume = {0},
year = {2008},
isbn = {978-0-7695-3110-6},
pages = {171-174},
doi = {http://doi.ieeecomputersociety.org/10.1109/DELTA.2008.28},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
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TY - CONF
JO - Electronic Design, Test and Applications, IEEE International Workshop on
TI - Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor
SN - 978-0-7695-3110-6
SP171
EP174
A1 - W. M. Tang,
A1 - C. H. Leung,
A1 - P. T. Lai,
PY - 2008
KW - Hydrogen sensor
KW - silicon carbide
KW - SiO2
VL - 0
JA - Electronic Design, Test and Applications, IEEE International Workshop on
ER -
 
Silicon dioxide deposited by RF sputtering is used as the gate insulator of Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are fabricated for investigation. Their hydrogen-sensing properties are compared with each other by taking measurements at various temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that the sensitivity of the devices is strongly related to the thickness of the insulator, and the thicker the insulator, the higher is the sensitivity.
Index Terms:
Hydrogen sensor, silicon carbide, SiO2
Citation:
W. M. Tang, C. H. Leung, P. T. Lai, "Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor," delta, pp.171-174, 4th IEEE International Symposium on Electronic Design, Test and Applications (delta 2008), 2008
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