This paper proposes a new approach to the optical prox- imity correction (OPC) method which reduces OPC calcu- lation loads by employing an optimization method. OPC is a method of correcting for a mask pattern to improve the fidelity of an image pattern on a silicon wafer. How- ever, conventional OPC calculations have become increas- ingly complex as the size of semiconductor devices becomes even smaller. In order to overcome this problem, we pro- pose an adaptive OPC technology using an optimization method to realize OPC for the full-chip area at fast opera- tional speeds. The effectiveness of this approach in terms of reduced OPC calculation times and highly-accurate correc- tion is demonstrated through computational experiments.