Power Analysis of DRAMs

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Seventh Asian Test Symposium (ATS'98)

Singapore

December 02-December 04

ISBN: 0-8186-8277-9

	ASCII Text	x
	Joerg Vollrath, Markus Huebl, Ernst Stahl, "Power Analysis of DRAMs," Asian Test Symposium, pp. 334, Seventh Asian Test Symposium (ATS'98), 1998.

	BibTex	x
	@article{ 10.1109/ATS.1998.741635, author = {Joerg Vollrath and Markus Huebl and Ernst Stahl}, title = {Power Analysis of DRAMs}, journal ={Asian Test Symposium}, volume = {0}, year = {1998}, issn = {1081-7735}, pages = {334}, doi = {http://doi.ieeecomputersociety.org/10.1109/ATS.1998.741635}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Asian Test Symposium TI - Power Analysis of DRAMs SN - 1081-7735 SP EP A1 - Joerg Vollrath, A1 - Markus Huebl, A1 - Ernst Stahl, PY - 1998 VL - 0 JA - Asian Test Symposium ER -

Joerg Vollrath

Markus Huebl

Ernst Stahl

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ATS.1998.741635

Power consumption is an important parameter for a dynamic random access memory (DRAM). Measurement of power consumption via the time dependent active current gives further insight into DRAM operation. Average current measurement techniques are presented in this paper to analyze time dependent current components and to calculate bitline and interbitline capacitances from power consumption.

Citation:

Joerg Vollrath, Markus Huebl, Ernst Stahl, "Power Analysis of DRAMs," ats, pp.334, Seventh Asian Test Symposium (ATS'98), 1998

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