17th Conference on Advanced Research in VLSI (ARVLSI '97) The Hierarchical Multi-Bank DRAM: A High-Performance Architecture for Memory Integrated with Processors Ann Arbor, MI September 15-September 16 ISBN: 0-8186-7913-1
A microprocessor integrated with DRAM on the same die has the potential to improve system performance by reducing the memory latency and improving the memory bandwidth. However, a high performance microprocessor will typically send more accesses than the DRAM can handle due to the long cycle time of the embedded DRAM, especially in applications with significant memory requirements. A multi-bank DRAM can hide the long cycle time by allowing the DRAM to process multiple accesses in parallel, but it will incur a significant area penalty and will therefore restrict the density of the embedded DRAM main memory. In this paper, we propose a hierarchical multi-bank DRAM architecture to achieve high system performance with a minimal area penalty. In this architecture, the independent memory banks are each divided into many semi-independent subbanks that share I/O and decoder resources. A hierarchical multi-bank DRAM with 4 main banks each composed of 32 subbanks occupies approximately the same area as a conventional 4 bank DRAM while performing like a 32 bank one - up to 65% better than a conventional 4 bank DRAM when integrated with a single-chip multiprocessor.
Citation:
Tadaaki Yamauchi, Lance Hammond, Kunle Olukotun, "The Hierarchical Multi-Bank DRAM: A High-Performance Architecture for Memory Integrated with Processors," arvlsi, pp.303, 17th Conference on Advanced Research in VLSI (ARVLSI '97), 1997 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||