Highly Reliable Testing of ULSI Memories with On-Chip Voltage-Down Converters April/June 1993 (vol. 10 no. 2) pp. 6-12
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/54.211523
Two testing techniques for ultra-large-scale integrated (ULSI) memories containing on-chip voltage downconverters (VDCs) are described. The first in an on-chip VDC tuning technique that adjusts internal V/sub CC/ to compensate for the monitored characteristics of the process parameters during repair analysis testing. The second is an operating-voltage margin test, performed at various internal V/sub CC/ levels during the water sort test (WT) and the final shipping test (FT).
Citation:
Masaki Tsukude, Kazutami Arimoto, Hideto Hidaka, Yasuhiro Konishi, Masanori Hayashikoshi, Katsuhiro Suma, Kazuyasu Fujishima, "Highly Reliable Testing of ULSI Memories with On-Chip Voltage-Down Converters," IEEE Design and Test of Computers, vol. 10, no. 2, pp. 6-12, Apr. 1993, doi:10.1109/54.211523 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||