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20th IEEE VLSI Test Symposium
Approximating Infinite Dynamic Behavior for DRAM Cell Defects
Monterey, California
April 28-May 02
ISBN: 0-7695-1570-3
Zaid Al-Ars, Delft University of Technology
Ad J. van de Goor, Delft University of Technology
Analyzing the dynamic faulty behavior in DRAMs is a severely time consuming task, because of the exponential growth of the analysis time needed with each memory operation added to the sensitizing operation sequence of the fault. In this paper, a new fault analysis approach for DRAM cell defects is presented where the total infinite space of dynamic faulty behavior can be approxiated within a limited amount of analysis time. The paper also presents the analysis results for some cell defects using the new approach, in combination with detection conditions that guarantee the detection of any detectable dynamic faults in the defective cell.
Index Terms:
infinite dynamic faults, DRAMs, functional fault models, defect simulation, memory testing
Citation:
Zaid Al-Ars, Ad J. van de Goor, "Approximating Infinite Dynamic Behavior for DRAM Cell Defects," vts, pp.0401, 20th IEEE VLSI Test Symposium, 2002
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