CMOS chips having high leakage are observed to have high burn-in fallout rate. IDDQ tes-ting has been considered as an alternative to burn-in. However, increased sub-threshold leakage current in deep sub-micron technologies limits the use of IDDQ testing in its present form. In this work, a statistical outlier rejection technique known as the median of absolute deviations (MAD) is evaluated as a means to screen early failures- using IDDQ data. MAD is compared with delta IDDQ and current signature methods. The results of the analysis of the SEMATECH data are presented.