18th IEEE VLSI Test Symposium (VTS'00) Delta Iddq for Testing Reliability Montreal, Canada April 30-May 04 ISBN: 0-7695-0613-5
Point defects, which cause small current increases and increased chip background currents at elevated temperatures can mask potentially early failures. The difficulty of screening point defects will likely also occur in denser geometries. Delta Iddq is shown to help distinguish between early fail and reliable chips at these elevated temperatures. Memory application demonstrates that a variety of delta Iddq tests can screen early fail defects.
Index Terms:
Iddq, reliability
Citation:
Theo J. Powell, James Pair, Melissa St. John, Doug Counce, "Delta Iddq for Testing Reliability," vts, pp.439, 18th IEEE VLSI Test Symposium (VTS'00), 2000 Usage of this product signifies your acceptance of the Terms of Use. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||