18th IEEE VLSI Test Symposium (VTS'00)
A Framework to Minimize Test Escape and Yield Loss during IDDQ Testing: A Case Study
Montreal, Canada
April 30-May 04
ISBN: 0-7695-0613-5
We describe a new framework to minimize test escape (TE) and yield loss (YL) during IDDQ testing. The proposed framework defines the concept of critical severity of a fault Sk', that provides a link between the fault magnitude and violation of one or more specifications. The framework provides various strategies to select the values of IDDQ threshold and provides a mechanism to compute test escape and/or yield loss. The framework is illustrated using an SRAM as a case study. The results demonstrate various trade-off that can be explored using the framework.
Index Terms:
IDDQ, critical severity, test escape, yield loss, fault modeling
Citation:
Hugo Cheung, Sandeep K. Gupta, "A Framework to Minimize Test Escape and Yield Loss during IDDQ Testing: A Case Study," vts, pp.89, 18th IEEE VLSI Test Symposium (VTS'00), 2000