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15th IEEE VLSI Test Symposium (VTS'97)
Assessing SRAM test coverage for sub-micron CMOS technologies
Monterey, California
April 27-May 01
ISBN: 0-8186-7810-0
V. Kim, Colorado State University
T. Chen, Colorado State University
This paper proposes a realistic memory fault probability model which predicts the probabilities of memory fault classes for a given process technology. Physical defects in the memory array are classified into five functional fault classes, which are stuck-at, stuck-open, transition, coupling, and data retention faults. Finally, the memory fault coverages of the known memory test algorithms are evaluated based on their functional fault class coverages.
Index Terms:
CMOS memory circuits; submicron CMOS technologies; SRAM test coverage assessment; memory fault probability model; physical defects; memory array; stuck-at faults; stuck-open faults; transition faults; coupling faults; data retention faults; memory fault coverages; memory test algorithms; functional fault class coverages; 0.5 to 1 mum
Citation:
V. Kim, T. Chen, "Assessing SRAM test coverage for sub-micron CMOS technologies," vts, pp.24, 15th IEEE VLSI Test Symposium (VTS'97), 1997
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