A novel built-in current sensor for I/sub DDQ/ testing of deep submicron CMOS ICs

V
VTS
1996
14th IEEE VLSI Test Symposium (VTS '96)
Abstract - A novel built-in current sensor for I/sub DDQ/ testing of deep submicron CMOS ICs

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14th IEEE VLSI Test Symposium (VTS '96)

Princeton, NJ

April 28-May 01

ISBN: 0-8186-7304-4

	ASCII Text	x
	S.P. Athan, D.L. Landis, S.A. Al-Arian, "A novel built-in current sensor for I/sub DDQ/ testing of deep submicron CMOS ICs," VLSI Test Symposium, IEEE, pp. 118, 14th IEEE VLSI Test Symposium (VTS '96), 1996.

	BibTex	x
	@article{ 10.1109/VTEST.1996.510845, author = {S.P. Athan and D.L. Landis and S.A. Al-Arian}, title = {A novel built-in current sensor for I/sub DDQ/ testing of deep submicron CMOS ICs}, journal ={VLSI Test Symposium, IEEE}, volume = {0}, year = {1996}, isbn = {0-8186-7304-4}, pages = {118}, doi = {http://doi.ieeecomputersociety.org/10.1109/VTEST.1996.510845}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - VLSI Test Symposium, IEEE TI - A novel built-in current sensor for I/sub DDQ/ testing of deep submicron CMOS ICs SN - 0-8186-7304-4 SP EP A1 - S.P. Athan, A1 - D.L. Landis, A1 - S.A. Al-Arian, PY - 1996 KW - CMOS integrated circuits; integrated circuit testing; ULSI; fault diagnosis; leakage currents; electric current measurement; electric sensing devices; built-in current sensor; I/sub DDQ/ testing; deep submicron CMOS ICs; fault detectability; fault diagnosability; ULSI CMOS VL - 0 JA - VLSI Test Symposium, IEEE ER -

S.P. Athan, Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA

D.L. Landis, Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA

S.A. Al-Arian, Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/VTEST.1996.510845

Today's built-in current sensor (BICS) techniques provide I/sub DDQ/ current sensitivity which is adequate for testing and diagnosing near-micron CMOS ICs. However, faulty and fault-free I/sub DDQ/ can become indiscernible at deep submicron levels. This paper describes a novel BICS methodology which improves fault detectability and diagnosability in ULSI CMOS ICs.

Index Terms:

CMOS integrated circuits; integrated circuit testing; ULSI; fault diagnosis; leakage currents; electric current measurement; electric sensing devices; built-in current sensor; I/sub DDQ/ testing; deep submicron CMOS ICs; fault detectability; fault diagnosability; ULSI CMOS

Citation:

S.P. Athan, D.L. Landis, S.A. Al-Arian, "A novel built-in current sensor for I/sub DDQ/ testing of deep submicron CMOS ICs," vts, pp.118, 14th IEEE VLSI Test Symposium (VTS '96), 1996

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