Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications

V
VLSID
2005
18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design (VLSID'05)
Abstract - Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications

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	Similar Articles Articles by R. Srinivasan Articles by Navakanta Bhat

18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design (VLSID'05)

Kolkata, India

January 03-January 07

ISBN: 0-7695-2264-5

	ASCII Text	x
	R. Srinivasan, Navakanta Bhat, "Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications," VLSI Design, International Conference on, pp. 392-396, 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design (VLSID'05), 2005.

	BibTex	x
	@article{ 10.1109/ICVD.2005.107, author = {R. Srinivasan and Navakanta Bhat}, title = {Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications}, journal ={VLSI Design, International Conference on}, volume = {0}, year = {2005}, issn = {1063-9667}, pages = {392-396}, doi = {http://doi.ieeecomputersociety.org/10.1109/ICVD.2005.107}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - VLSI Design, International Conference on TI - Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications SN - 1063-9667 SP392 EP396 A1 - R. Srinivasan, A1 - Navakanta Bhat, PY - 2005 KW - null VL - 0 JA - VLSI Design, International Conference on ER -

R. Srinivasan, Indian Institute of Science-Bangalore

Navakanta Bhat, Indian Institute of Science-Bangalore

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ICVD.2005.107

In this paper, we have studied and compared the RF performance metrics, unity gain frequency (f_t) and Noise Figure (NF), of the devices with channel engineering consisting of halo and super steep retrograde channel (SSRC) implants, and the devices with uniform channel doping concentration, using process, device, and mixed mode simulations. The simulation results show that at 90nm gate lengths, for a given off-state leakage constraint (I_OFF ), devices with uniform channel doping concentration deliver higher f_t and lower NF than the devices which used halo and SSRC, due to better sub-threshold slope and transconductance. However, at 0.25?m technology the same is not true. Therefore, in the 90nm devices uniform channel doping profile is recommended to get better RF performance.

Citation:

R. Srinivasan, Navakanta Bhat, "Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications," vlsid, pp.392-396, 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design (VLSID'05), 2005

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