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16th International Conference on VLSI Design
Small Signal Characteristics of Thin Film Single Halo SOI MOSFET for Mixed Mode Applications
New Delhi, India
January 04-January 08
ISBN: 0-7695-1868-0
ASCII Text
x 
 
Najeeb-ud-din Hakim, V. Ramgopal Rao, J. Vasi, "Small Signal Characteristics of Thin Film Single Halo SOI MOSFET for Mixed Mode Applications," VLSI Design, International Conference on, pp. 110, 16th International Conference on VLSI Design, 2003.
 
 
BibTex
x
 
@article{ 10.1109/ICVD.2003.1183123,
author = {Najeeb-ud-din Hakim and V. Ramgopal Rao and J. Vasi},
title = {Small Signal Characteristics of Thin Film Single Halo SOI MOSFET for Mixed Mode Applications},
journal ={VLSI Design, International Conference on},
volume = {0},
year = {2003},
issn = {1063-9667},
pages = {110},
doi = {http://doi.ieeecomputersociety.org/10.1109/ICVD.2003.1183123},
publisher = {IEEE Computer Society},
address = {Los Alamitos, CA, USA},
}
 
 
RefWorks Procite/RefMan/Endnote
x 
 
TY - CONF
JO - VLSI Design, International Conference on
TI - Small Signal Characteristics of Thin Film Single Halo SOI MOSFET for Mixed Mode Applications
SN - 1063-9667
SP
EP
A1 - Najeeb-ud-din Hakim,
A1 - V. Ramgopal Rao,
A1 - J. Vasi,
PY - 2003
KW - null
VL - 0
JA - VLSI Design, International Conference on
ER -
 
Najeeb-ud-din Hakim, Indian Institute of Technology
V. Ramgopal Rao, Indian Institute of Technology
J. Vasi, Indian Institute of Technology
In this paper we report a study on the small signal characterization and simulation of Single Halo (SH) thin film Silicon-on-Insulators (SOI) nMOSFETs for analog and mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration in the rest of the channel. Besides excellent DC output characteristics and experimental characterization results on these devices show better Vth - L roll-off, low DIBL, higher breakdown voltages and kink free operation. Small signal characterization on these devices shows higher AC transconductance, higher output resistance and better dynamic intrinsic gain (gmRo) in comparison with the conventional (CON) homogenously doped SOI MOSFETs. Also, the low drain junction capacitance as a result of low impurity concentration near the drain region is beneficial for improved circuit performance.
Citation:
Najeeb-ud-din Hakim, V. Ramgopal Rao, J. Vasi, "Small Signal Characteristics of Thin Film Single Halo SOI MOSFET for Mixed Mode Applications," vlsid, pp.110, 16th International Conference on VLSI Design, 2003
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