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2003 International Workshop on Memory Technology, Design and Testing (MTDT'03)
Systematic Memory Test Generation for DRAM Defects Causing Two Floating Nodes
San Jose, California
July 28-July 29
ISBN: 0-7695-2004-9
Zaid Al-Ars, Delft University of Technology
Ad J. van de Goor, Delft University of Technology
The high complexity of the faulty behavior observed in DRAMs is caused primarily by the presence of internal floating nodes in defective DRAMs. This paper describes a new analysis method to apply electrical simulation for investigating the faulty behavior resulting from defects causing two floating nodes within the memory. The paper also presents the results of a simulation study performed on bit line opens to validate the newly proposed method, and suggests a test to detect these bit line opens.
Index Terms:
DRAMs, dynamic faults, two floating nodes, defect simulation, memory testing
Citation:
Zaid Al-Ars, Ad J. van de Goor, "Systematic Memory Test Generation for DRAM Defects Causing Two Floating Nodes," mtdt, pp.27, 2003 International Workshop on Memory Technology, Design and Testing (MTDT'03), 2003
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