Converting an Embedded Low-Power SRAM from Bulk to PD-SOI

	This Article
	Subscribers, please Login Purchase article: $19 PDF IEEE Xplore Subscribers RSS feed
	Share
	Email this Article to a friend
	Bibliographic References
	ASCII Text BibTex RefWorks Procite/RefMan/Endnote
	Add to:
	Digg Furl Spurl Blink Simpy Google Del.icio.us Y!MyWeb
	Search
	Similar Articles Articles by Mario R. Casu Articles by Philippe Flatresse

The 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT 2002)

Isle of Bendor, France

July 10-July 12

ISBN: 0-7695-1617-3

	ASCII Text	x
	Mario R. Casu, Philippe Flatresse, "Converting an Embedded Low-Power SRAM from Bulk to PD-SOI," Memory Technology, Design and Testin, IEEE International Workshop on, pp. 163, The 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT 2002), 2002.

	BibTex	x
	@article{ 10.1109/MTDT.2002.1029780, author = {Mario R. Casu and Philippe Flatresse}, title = {Converting an Embedded Low-Power SRAM from Bulk to PD-SOI}, journal ={Memory Technology, Design and Testin, IEEE International Workshop on}, volume = {0}, year = {2002}, issn = {1087-4852}, pages = {163}, doi = {http://doi.ieeecomputersociety.org/10.1109/MTDT.2002.1029780}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }

	RefWorks Procite/RefMan/Endnote	x
	TY - CONF JO - Memory Technology, Design and Testin, IEEE International Workshop on TI - Converting an Embedded Low-Power SRAM from Bulk to PD-SOI SN - 1087-4852 SP EP A1 - Mario R. Casu, A1 - Philippe Flatresse, PY - 2002 KW - null VL - 0 JA - Memory Technology, Design and Testin, IEEE International Workshop on ER -

Mario R. Casu, Politecnico di Torino

Philippe Flatresse, ST Microelectronics

DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/MTDT.2002.1029780

The migration of an embedded 1 Mbit SRAM for low power applications from a 0.13\mu m Bulk to a Partially Depleted Silicon-on-Insulator (PDSOI) technology is described in this paper. Floating body effects such as threshold voltage variation and parasitic bipolar turn on and their impact on sense amplifiers, pass-gates based multiplexers and dynamic decoders are addressed. Solutions like the use of body contacts in specific parts are discussed. A SRAM chip with various testable configurations has been taped out.

Citation:

Mario R. Casu, Philippe Flatresse, "Converting an Embedded Low-Power SRAM from Bulk to PD-SOI," mtdt, pp.163, The 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT 2002), 2002

Peer Review Notice | Give Us Feedback

Usage of this product signifies your acceptance of the Terms of Use.