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IEEE International Conference on Microelectronic Systems Education
Student Realization in Cleanroom of Silicon-Germanium Thin Film Transistors
Arlington, Virginia
July 19-July 21
ISBN: 0-7695-0312-8
This tutorial is intended to graduate students specialized in microelectronics formation. This training allows the students to fabricate a simple but original device. A thin film transistor for which the active layer is made of silicon-germanium alloy has been fabricated and electrically characterized. This experiment allowed the student to work on several types of process steps and to evaluate the role of the active layer on the electrical characteristics of a transistor.
Citation:
D. Guillet, K. Mourgues, R. Rogel, H. Lhermite, O. Bonnaud, "Student Realization in Cleanroom of Silicon-Germanium Thin Film Transistors," mse, pp.69, IEEE International Conference on Microelectronic Systems Education, 1999
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