International Test Conference 2003 (ITC'03)
Screening VDSM Outliers using Nominal and Subthreshold Supply Voltage IDDQ
Charlotte, NC, USA
September 30-October 02
ISBN: 0-7803-8107-6
B. Benware, LSI Logic Corporation, Gresham, Oregon
K. Cota, LSI Logic Corporation, Gresham, Oregon
R. Madge, LSI Logic Corporation, Gresham, Oregon
L. Ning, Portland State University, Oregon
Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-ProcessingTM (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The screen is demonstrated with 0.18?m and 0.13?m volume data. The screen's effectiveness is compared to stuck-at and other IDDQ screens.
Citation:
C. Schuermyer, B. Benware, K. Cota, R. Madge, R. Daasch, L. Ning, "Screening VDSM Outliers using Nominal and Subthreshold Supply Voltage IDDQ," itc, pp.565, International Test Conference 2003 (ITC'03), 2003