International Test Conference 2003 (ITC'03)
Burn-in Temperature Projections for Deep Sub-micron Technologies
Charlotte, NC, USA
September 30-October 02
ISBN: 0-7803-8107-6
Burn-in faces significant challenges in recent CMOS technologies. The self-generated heat of each IC in a burn-in environment contributes to larger currents that can lead to further increase in junction temperatures, possible thermal run away, and yield-loss of good parts. Calculations show that the junction temperature is increasing by 1.45X/generation. This paper estimates the increase in junction temperature with scaling and discusses the optimal burn-in temperature with scaling. Our research indicates that the burn-in temperature must also be reduced with technology scaling. The impact on commercial burn-in ovens is also described.
Citation:
Oleg Semenov, Arman Vassighi, Manoj Sachdev, Ali Keshavarzi, C.F. Hawkins, "Burn-in Temperature Projections for Deep Sub-micron Technologies," itc, pp.95, International Test Conference 2003 (ITC'03), 2003
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